ABSTRACT
Spin-transfer torque random-access memory (STT-RAM) is a type of magnetic RAM (MRAM) that uses a magnetic device to store data. Traditional MRAM technology, also called toggle-mode MRAM, uses a current-induced magnetic field to switch the data stored in the magnetic pillars. STT-RAM, which is based on spin-polarized current-induced magnetic tunneling junction (MTJ) switching, has attracted a lot of attention due to its fast speed, low power consumption, and better scalability. Switching current, the required magnitude of the writing current to switch the MTJ resistance, is an important electrical parameter in STT-RAM design. MTJ switching probability is an important factor in understanding the switching behavior of an MTJ. In thermal-assisted STT-RAM, the free layer of the basic MTJ stack is coupled with an antiferromagnetic (AF) layer. At room temperature, the free layer magnetization is stabilized by the exchange bias arising from the atomic contact with the AF layer.
