ABSTRACT
Motivation for research on new types of nonvolatile memory stems from concerns regarding NAND flash memory scaling. The latest technology node used in NAND flash manufacturing has entered sub-28-nm range, which is far more advanced than 20 years ago when emerging nonvolatile memory technologies were first investigated. Although many unique characteristics have been demonstrated by the latest research on the next generation of nonvolatile memories, there are still some technical obstacles that need to be overcome before they enter the mass production stage. As the most mature technology, the future research on Phase change memory may focus on the improvement of memory product specifications; that is, access and endurance performance. The physical fundamentals of all of the memory technologies introduced have been well studied and their development has entered the engineering demonstration stage.
