ABSTRACT
Through controlled doping, the electronic properties of semiconductors can be tuned over a wide range, making them an indispensible part of modern technology. This chapter deals with the electronic properties of dopants, defects, and free carriers in semiconductors. We begin with a discussion of hydrogenic impurities, deep levels, and methods of calculating the electronic properties of defects. Then, we investigate how the defect levels affect the population of electrons in the conduction band and holes in the valence band. Finally, we discuss electronic transport and the principal scattering mechanisms that affect carrier mobility.
