ABSTRACT
In conclusion, this chapter reviews the recent progress in nano-FETs based on novel nanostructure materials as potential supplements to silicon CMOS technology. A short overview of carbon-based and 1D nanostructure manufacturing and metrology methods is followed by an introduction of FETs. The suitability of the major types of carbon nanostructures and 1D nanostructures as conducting channels of FETs is compared on the basis of the dimensionality. For each of these materials, recent progress in its synthesis and electrical and structural characterization, as well as its implementation in various gate configurations is surveyed, with emphasis on nanoscale aspects of the FET design and attainable device performance. Based on these novel nanostructures, novel nanoscale devices with high performance will be desired in the future.
