ABSTRACT
Space systems require advanced complementary metal-oxide-semiconductor (CMOS) technology to perform functions including communication, control, power conversion, and imaging. In space, electronic devices are exposed to various forms of radiation, including electrons, protons, neutrons, and heavy ions. The radiation may produce effects in the electronic devices ranging from temporary loss of data to catastrophic failure. Electronic device failure can occur because of longterm degradation caused by continuous exposure to the space-radiation environment (total dose effects) or as a result of transient, high-energy particle radiation (single event effects). The specic effects produced depend strongly on the specic technology and the radiation environment. The radiation belts or Van Allen belts are a part of the earth’s magnetosphere structure, which was
8.1 Introduction .......................................................................................................................... 193 8.2 Radiation Damage Mechanism ............................................................................................. 195
8.2.1 Ionization .................................................................................................................. 195 8.2.2 Atomic Displacement ............................................................................................... 195 8.2.3 Radiation Effects in MOS Devices ........................................................................... 196
8.3 Lithium Ion Irradiation Effect on hfO2-Based MOS Capacitors .......................................... 197 8.3.1 Why Lithium Ion? ..................................................................................................... 197 8.3.2 Fluence-Dependent Study on HfO2-Based MOS Capacitors ................................... 198 8.3.3 Frequency-Dependent Radiation Response of HfO2-Based MOS Capacitors .........203
8.4 Oxygen Ion Irradiation Effect on HfO2-Based MOS Capacitors ......................................... 210 8.4.1 Why Oxygen Ion Irradiation? ................................................................................... 210 8.4.2 Fluence Effect on HfO2-Based MOS Capacitors ...................................................... 211
8.5 Summary .............................................................................................................................. 215 Acknowledgments .......................................................................................................................... 216 References ...................................................................................................................................... 216
discovered at the end of 1950s during the launch of the rst Russian and American articial satellites. These belts are essentially constituted of energetic electrons and ions whose movement around the earth is strongly constrained by the earth’s magnetic eld. They are notably at the origin of the deterioration of some satellite components (such as the solar panels), parasitic signal in the embarked electronic devices, and the electric discharge outbreak between different parts of the satellite (Merabtine et al. 2004).
