ABSTRACT
In this chapter, we will discuss the types of x-ray detectors that are manufactured using more-or-less standard lithographic techniques (both single-sided and double-sided silicon wafer processes). The fact that they share this feature with field effect transistors (FETs) presents the technical possibility of integration with them. The important cases of chargecoupled devices (CCDs) and silicon drift detectors (SDDs) are not manufactured using standard integrated circuits (ICs) technology and will be discussed separately in Chapters 8 and 9, respectively. We will be considering only direct excitation x-ray spectroscopy in silicon and not the family of detectors that rely on intermediate media such as optically coupled scintillators, phosphors, and image intensifiers. We will also not be considering devices primarily designed for imaging.
