ABSTRACT
State-of-the-art Czochralski (CZ) silicon materials and engineered silicon substrates, such as silicon on insulator (SOI) and strained silicon-on-insulator (sSOI), fabricated by the Smart-Cut™ technology1 with monocrystalline silicon layers some 10 to 100 nm thick still contain a certain density of imperfections and residual crystal defects. These may originate from the crystal growth process of the CZ substrates, such as vacancy agglomerates (D-defects, crystal-originated particles (COPs)) and oxygen precipitate nuclei, or from the fabrication process of the engineered silicon substrates such as oxidation-induced stacking faults (OSF).2−5 The successful implementation of CZ silicon materials and engineered silicon substrates into the mass production of present or
9.1 Introduction .................................................................................................. 289 9.2 General Aspects of Chemistries for Etching of Silicon ............................... 291 9.3 Classical Chemistries for Preferential Etching of Silicon ............................ 293 9.4 Novel Chromium-Free Chemistries for Preferential Etching of Silicon
Thin Films and Substrates ............................................................................ 293 9.4.1 FS Cr-Free SOI Etching Solutions .................................................... 293 9.4.2 Etching Mechanism and the Special Role of Bromine or Iodine ..... 298 9.4.3 Organic Peracid Etching Solutions ...................................................300 9.4.4 Etching Solutions with OOE.............................................................308
