ABSTRACT
The transistor laser (TL) is a new device that has the unique feature of working as both an electronic and a photonic device. After the announcement of the light-emitting transistor [1], the group led by Feng and Holonyak at the University of Illinois at Urbana-Champaign (UIUC) announced the TL in 2004 [2]. Basically, it is a heterojunction bipolar transistor (HBT) in which the emitter and collector terminals are used for electrical signal input and output, respectively, while an optical signal, either incoherent or coherent (self-sustained or amplied), comes out of the base region.
