ABSTRACT
Cluster ion implantation by large gas cluster ions and by polyatomic cluster ions is a promising new area of opportunity for both research and practical applications such as semiconductor doping. The low-energy effect is the primary advantage. However, because of the low charge-to-mass ratio and the surface interactions of large aggregates of atoms at the same time, several other unique implantation features can also be achieved. Prospective advantages of cluster ion implantation include extremely shallow doping, mass-independent doping, E1/3 depth dependence of implanted atoms, self-amorphization, reduced transient enhanced diffusion (TED), and absence of end-of-range (EOR) damage effects.
