ABSTRACT
Cluster ion beams have become powerful and versatile tools for processing surfaces of materials. Development of cluster ion beams has followed extensive development of conventional ion beam technology, specifically the advances made in equipment and processes for implantation doping of semiconductors. Throughout many decades of the twentieth century, and starting even earlier, great progress was made in advancing ion beam techniques and equipment. The developmental history of ion beams in general and ion implantation in particular represents an excellent example of how the collective contributions of a great many individual researchers and organizations can lead to enormous progress in a new field of technology. Figure 1.1 outlines a simple history of ion implantation development.
