ABSTRACT
Susceptibility to radiation environment of advanced electronic devices is often responsible for the highest failure rate of all reliability concerns (electromigration, gate rupture, negative bias temperature instability [NBTI], etc.). In modern static random access memories (SRAMs), the two predominant single-event effects (SEEs) are the single-event upset (SEU) and multiple upsets (MUs). MUs are topological errors in neighboring cells. If the cells belong to the same logical word they are called multiple-bit upsets (MBUs), otherwise they are labeled as multiple-cell upsets (MCUs). MUs have received increased scrutiny in recent years [1-8] because they are uncorrectable by simple error-correcting code (ECC) schemes and therefore threaten the efficiency of error detection and correction (EDAC).
