ABSTRACT
Development of the Monte Carlo method as we know it today originally started immediately after the Second World War, in the frame of the Manhattan Project at Los Alamos, for the simulation of radiation transport [1]. Its inception is also closely linked with the introduction of the first digital computers, without which the method would probably have remained theoretical without any application. Monte Carlo simulations have since been used to study the effects of radiation in semiconductor devices as soon as a relevant problem appears, with the discovery of single-event
2.1 Introduction ....................................................................................................23 2.2 A Brief History of the Monte Carlo Method ..................................................24 2.3 Definition of the Monte Carlo Method ...........................................................26 2.4 Interest of the Monte Carlo Method for the Simulation
of Radiation Effects in Semiconductor Devices .............................................27 2.4.1 Single-Event Effects ...........................................................................27 2.4.2 Total Ionizing Dose Effects ................................................................30 2.4.3 Displacement Damage Dose Effects ..................................................30
