CharacteristicsFigure 12.1 shows typical drain current and drain voltage (Ids-Vds) characteristics of GaN HEMTs. High power devices have large gate width (gate periphery) to get high power. But the Id is normalized by unit gate width(/mm) for easier comparison in Fig. 12.1 and Table 12.2. This device has more than 200 V of breakdown voltage with good pinch-off characteristics. As described in a later section, the peak drain voltage reaches three times the operation (biased) voltage in “inverse class F” and class E operations. Roughly a 65 V operation (65 V × 3 = 195 V < 200 V) can be applied for this device.