It is well known that graphene has ultrahigh carrier mobility. However, the zero bandgap of graphene will lead to a large leaking current in graphene-based transistors and, therefore, limits its application in high-performance semiconducting electronics. Creation of graphene heterostructures will not only result in graphene-based articial architectures that open the bandgap of graphene, but also pave a promising way to the landscape of full-integrated and multifunctional graphene electronics.