ABSTRACT
Graphene is currently being investigated for use in a wide range of applications, and the capability of patterning the material efciently and consistently is therefore a necessity. Although graphene may be patterned using standard lithographic methods, care needs to be taken when processing the 2D material with certain polymer resists. For example, photoresist layers coated onto graphene for processing may not be completely removed during development. Even small amounts of residue may adversely affect the performance of graphene devices unless steps are taken to completely remove residues.
