ABSTRACT
Contents 10.1 Introduction................................................................................................. 273 10.2 Optoelectronic Properties of MoS2 .......................................................... 274 10.3 Mechanical Properties of MoS2 ................................................................ 283
10.3.1 Static Deformation Experiments: Elastic Properties of MoS2 ........................................................................................ 284
10.3.2 Dynamic Experiments: MoS2 Mechanical Resonators ............ 287 10.4 Strain Engineering in MoS2 ...................................................................... 290 10.5 Conclusions .................................................................................................. 295 Acknowledgements ............................................................................................... 295 References ............................................................................................................... 295
unexplored at that time. ese materials are characterised by strong covalent in-plane bonds and weak interlayer van der Waals interactions which give them a layered structure. is rather weak interlayer interaction can be exploited to extract atomically thin layers by mechanical2 or chemical exfoliation methods.6 In the last 5 years, a wide variety of materials with very dierent electronic properties (ranging from wide-band gap insulators to superconductors) have been explored.7-13 ese materials are expected to complement graphene in applications for which graphene does not possess the optimal properties. 2D semiconductors with an intrinsic large band gap are a good example of materials that could complement graphene.3,14 While the outstanding carrier mobility of graphene makes it very attractive for certain electronic applications (e.g. high-frequency electronics), the lack of a band gap dramatically hampers its applicability in digital electronics. Graphene eld-eect transistors (FETs) suer from large o-state currents due to the low resistance values at the charge neutrality point. e large o-state current also translates to a large dark current in graphene-based photodetectors which limits their performance.
