ABSTRACT
Contents 15.1 Introduction.................................................................................................409 15.2 Brief History of Black Phosphorus ........................................................... 411 15.3 Material Properties of 2D Phosphorene .................................................. 415 15.4 Nanoelectronic and Optoelectronic Applications of Phosphorene ....422 15.5 Conclusion ................................................................................................... 427 Acknowledgements ............................................................................................... 429 References ............................................................................................................... 429
drawn the attention of the semiconductor industry, which is now a hundredsof-billions dollar business – the foundation of all the electronics devices in our daily life. e basic elements of electronic circuits are electronic devices, and the most famous one is the metal-oxide-semiconductor eld-eect transistor (MOSFET). e state-of-art MOSFET is scaled down to a 10 nm regime. e limited mobility of silicon, which is the dominant material in the semiconductor industry, drives the research interest in looking for materials with higher carrier mobility. With an extremely high mobility of up to 200,000 cm2/V s at low temperature, as well as 10,000 cm2/V s in graphene MOSFETs, it can in principle lead to a higher on-current in MOSFET devices [4]. Moreover, the electrostatic control of the ultimately scaled graphene MOSFET can be better than the Si MOSFET due to its ultra-thin 2D nature. Besides, its high thermal conductivity, high optical damage threshold and third-order optical non-linearity also make it promising for use in photonic devices [5]. Although many eorts have been made in exploring graphene for nanoelectronics, its zero band gap limits its applications. Without a band gap, the MOSFET cannot be turned o, and the current cannot saturate when turned on, which is crucial for the MOSFET. On the other hand, the zero band gap also makes the lifetime of the photo-generated carriers very short, which limits its eciency for photonics applications such as when used as photodetectors.
