ABSTRACT
Contents 4.1 Introduction................................................................................................... 79 4.2 RF Transistor Figures of Merit ................................................................... 81 4.3 Experimental RF GFETs .............................................................................. 86 4.4 Flexible RF Electronics ................................................................................ 93 4.5 Vertical Graphene Transistors: Performance Potential .......................... 93 4.6 Vertical Graphene Transistors: Experiments ........................................... 98 4.7 Conclusion ................................................................................................... 100 References ............................................................................................................... 101
research groups started working intensively on graphene transistors, and in 2007, the rst FET with a large-area graphene channel was demonstrated [5]. In the following, we designate such transistors as graphene eld-eect transistors (GFETs). Figure 4.1a shows the basic structure of a GFET. Essentially, it resembles the classical metal-oxide-semiconductor FET (MOSFET) architecture and consists of an insulating substrate with the large-area graphene channel on top, the ohmic source and drain contacts, and the gate which is separated from the channel by a thin-gate dielectric.
