ABSTRACT
Graphene oxide (GO), a single layer of graphite oxide, emerges as a precursor material for the chemical synthesis of graphene; however, it has some interesting electrical properties that are strongly inuenced by the oxygen functional groups arranged on its surface and edges. By adjusting the ratio of carbon to oxygen atoms, a wide range of electrical properties with insulator-to-semimetal characteristics are obtained in GO. In this chapter, we have discussed the electrical properties in GO as an insulator, a semiconductor, and a semimetal. Further, the applications of GO as an active material in resistive-switching nonvolatile memory devices and its composites with ZnO in thin-lm transistors have also been discussed.
