ABSTRACT
In this chapter, we present large-area graphene oxide (GO) thin lms as a potential transparent electrode fabricated by using a simple route. GO thin lms were prepared by the solution-casting method onto glass substrates, and were rendered conductive either with hydrazine treatment or annealing. Annealed lms treated without hydrazine revealed superiority over the others. Surface morphology of these lms showed a uniform lm texture as seen by scanning electron microscopy and atomic force microscopy, which is wrinkle-free with roughness as low as ~1.4 nm. Desired optical and electrical properties were achieved by thermal reduction at a temperature as low as 170°C without any reagent, which is an important factor in practical application elds. Microstructural perfection is quite evident from the abrupt descent around a specic energy of photons in the transmittance spectrum. In particular, we have demonstrated that device-quality GO thin lms can be obtained via a low-cost scalable technique in comparison with other previous works. The nature and extent of the band gap of GO are analyzed. The Urbach energy and different electrical parameters are addressed. The ndings with skills to develop such goodquality GO thin lms are very signicant in view of an optimized use of these lms in electrical and photoelectric applications.
