ABSTRACT
This chapter describes Analog Discovery board to solve problems involving metal-oxide semiconductor field effect and bipolar junction transistors (BJT). It shows that the general topics are dc model of BJT and Metal-oxide semiconductor field effect transistors (MOSFET), biasing of discrete circuits, and frequency response of amplifiers. BJT consists of two pn junctions connected back to back. There are two types of BJT: NPN and PNP transistors. The dc behavior of the BJT can be described by the Ebers-Moll model. The voltages of the base-emitter and base-collector junctions define the region of operation of the BJT. Use the Analog Discovery board to determine the input current verses voltage curve of the NPN transistor 2N3904. MOSFET normally have high input resistance because of the oxide insulation between the gate and the channel. There are two types of MOSFETs: the enhancement type and the depletion type.
