ABSTRACT
The electronic properties of adatom-doped graphenes are one of important topics in physics, chemistry, and materials. They are greatly diversified by various adatom adsorptions. The adatom-doped graphenes have attracted a lot of theoretical and experimental research. According to the modified electronic properties, there are two kinds of adatom-doped graphenes, namely semiconducting and metallic systems. The experimental measurements have identified the adatom-dependent semiconducting graphenes, such as the O-, H-, Si-, S-, P-, and BN-doped graphenes. One of the effective methods to obtain large-scale graphene is chemical exfoliation where graphite is exfoliated through oxidation and is then subsequently reduced to graphene monolayers. The band-gap engineering becomes a critical issue in graphene-related systems. Numerous theoretical and experimental researches have been carried out to explore the geometric structure of graphene oxides (GOs). Electronic properties of GOs are enriched by the number of graphene layers and stacking configuration.
