ABSTRACT
The hydrogen-like behavior of some impurities follows from a simple mechanism for impurity atoms which form a substitutional solution with a semiconductor crystal. The valences of a substituting atom and a substituted atom differ by ±1. For germanium and silicon, these are group-III and groupV impurity atoms (Figure 2.1). In this case, four outer valent electrons of a host atom are replaced by four valent electrons of an impurity atom. Likewise, hydrogen-like impurities for AIIIBVcompounds are group-II atoms (acceptors), which replace Am-sublattice atoms, and group-VI atoms (donors), which replace Bv-sublattice atoms.
