ABSTRACT
AlGaN/GaN heterostructure-field effect transistor (HFET) has emerged as an outstanding wide band-gap semiconductor device since the last decade due to its inherent properties over conventional AlGaAs/GaAs and Si based devices of narrow band-gap. In this brief, the drain current, transconductance and its derivatives, intercept point, intermodulation distortion, and linearity distortion parameters of MOS AlGaN/GaN HFET are calculated and analysed.
