ABSTRACT
Numerical simulation tools were heavily used during DOTSEVEN, aiding the device design and optimization during process development and the physical understanding of the HBT operation so as to support compact modeling. A three-dimensional thermal solver was used for investigating the temperature distribution within the device structure and its impact on the HF characteristics. The device design of advanced SiGe HBTs demands an as accurate as possible prediction of the electrical behavior in order to shorten the time from process development of new devices to product and to identify promising device structures during the early stage of process development. Compared to the BTE results, a reasonable agreement for the transfer characteristic between DD transport and BTE is obtained up to the onset of collector high current effects. Compared to DD, the HD transport model with the SDevice defaults gives already a good agreement for the transit frequency.
