150 nm Gallium Nitride on Silicon Carbide Technology for High-power 5G New Radio Applications

In recent years, gallium nitride (GaN) transistors have become a key enabling technology for cellular communication networks, greatly contributing to the increase in energy efficiency and data rates of 5G new radio (5GNR) and future 6G. While LDMOS was the principal high power technology up until the 4G network, the very stringent constraints of modern telecommunications, as well as the opening to new frequency bands – mid-band (FR3) and millimeter waves (FR2) − are pushing operators to transition toward GaN.