ABSTRACT
SiGe:C heterojunction bipolar transistors (HBTs) have emerged to address the high demand of high-speed applications in telecommunications and more recently in the space domain. But the ramifying effects of radiation on the DC characteristics and low-frequency noise of SiGe HBTs reveal the degradation in performance and reliability of SiGe HBTs and their associated circuits. Consequently, it is important to understand the impacts of total ionizing dose on SiGe HBTs to design radiation-tolerant and viable electronic devices. This presentation investigates the impacts of X-ray irradiations on advanced SiGe:C HBTs, specifically the ones developed in the B55 BiCMOS technology with fT/fmax of 320/370 GHz, supplied by STMicroelectronics in the framework of the European SHIFT project. Different degradation parameters, such as relative base current and base current noise spectral density, are used in this work. Moreover, the impacts of collector doping, geometry, and annealing will be explored in detail.
