ABSTRACT
—Indium phosphide (InP) double heterojunction bipolar transistor (D-HBT) technology can be co-integrated with silicon (e.g., silicon-on-insulator (SOI), fully depleted SOI (FDSOI), silicon germanium bipolar complementary metal-oxyde semiconductor (SiGe BiCMOS)) and antennas in order to benefit from their superior high-frequency performances in a cost- effective manner (using 2.5D, 3D integration techniques), while benefiting from the higher integration level provided by silicon ICs. This paper presents the strategic and practical InP D-HBT technology development challenges for the successful 2.5D/3D integration of millimeter wave and subTHz applications from the perspective of InP manufacturing.
