ABSTRACT
This project introduces a low-latency sense amplifier using Gate Diffusion Input (GDI) technology, aiming to enhance speed and power efficiency in high-speed memory applications. Unlike traditional CMOS-based amplifiers, which experience increased delay and higher power consumption, the GDI-based approach reduces both the transistor count and energy dissipation. By optimizing the current mirroring circuit, the implemented amplifier achieves lower power consumption and minimized latency, particularly beneficial for RAM circuits. Simulation results confirm significant improvements in propagation delay and energy efficiency, demonstrating GDI's potential in advancing future memory architectures.
