ABSTRACT
This study investigates the chemical mechanical polishing (CMP) behavior of AlSi10Mg alloys using a series of nine designed slurries. The experimental results reveal that the surface quality is strongly dependent on the synergistic action of abrasives, oxidants, and organic additives. Surface roughness (Sa) measurements indicate that the optimized slurry, containing silica and ceria abrasives, polyethylene glycol, citric acid, hydrogen peroxide, and serine under light-assisted catalysis, achieves the smoothest surface with an Sa of 0.242 nm. Electrochemical analyses demonstrate that the addition of oxidants and amino acids regulates both corrosion potential and current density, thereby balancing passivation and material removal. FTIR spectra further confirm the involvement of serine functional groups and the formation of Al-O, Si-O, and Si-O-Ce bonds, which facilitate surface complexation and chemical modification. A comprehensive CMP mechanism is proposed in which serine chelation, peroxide oxidation, and light-enhanced ceria catalysis synergistically promote efficient chemical reactions, while silica abrasives ensure mechanical removal. These findings establish an effective strategy for achieving near-atomic-level planarization of lightweight AlSi10Mg alloys.
