ABSTRACT
In this paper, a small signal III-V high gain MOSFET is proposed. InGaAs has been adapted as a material of choice in this work. A new n-channel MOSFET (VE-MOS) with trench technology is demonstrated. The InGaAs VE-MOS consists of very good current conduction in order to obtain the considerable enhancements in transconductance, output drive current, and cut-off frequency for amplifier applications. With the help of 2D simulator analysis, the VE-MOS architecture demonstrated to obtain 1.4 times higher drive current, 27% enhancement in gain, and 17% higher in cut-off frequency in comparison to the planer MOS.
