ABSTRACT
FinFET devices are playing a key role in today’s world for scaling the transistor size and for designing the low power based VLSI circuits. In this paper we present the impact of temperature and its influence on the performance of 14nm FinFET device. In the proposed design we have done the comparative analysis of the 14nm FinFET device on different oxide material and analyse the performance of the device by varying the temperature from 200 K to 350 K. All the simulation of the FinFET device was carried out on Visual Tcad by Cogenda. As a result we found that saturation current, threshold voltage and mobility of the devices decreases as the temperature increases but in the high-K dielectric material of 14nm FinFET devices show less adverse effect as compared to the low-K dielectric material.
