ABSTRACT
This chapter describes the experimental techniques most commonly used in the characterization of silicon sensors. It focuses on the experimental setups and methods, which are referred to in many of the measurements. The static characterization of a silicon sensor, with or without internal gain layer, is carried out by measuring the current-voltage, capacitance-voltage, and capacitance-frequency characteristics of the device in absence of external particles. The typical setup for these measurements consists of a probe station, with or without the capability to perform measurements at controlled, and eventually low, temperature, electrically connected to a set of devices. The Cp-Rp and Cs-Rs equivalent circuits are good models for unirradiated sensors. The chapter presents the principles of operation of the Transient Current Technique along with the descriptions of some typical measurements that can be performed on UFSD sensors.
