ABSTRACT
The properties of Ultra-Fast Silicon Detectors depend upon several basic parameters: the depth and width of the gain implant, the bulk active thickness and doping, the design of the inter-pad region, and the temperature of operation. This chapter analyses the impact of these quantities on the UFSDs performances. It presents the temporal resolution of UFSDs and discusses the issues connected with the production of large quantities of UFSDs. The chapter analyses the parameters of the gain layer design such as narrow versus wide gain implants, deep versus shallow gain implants, high versus low gain implant doping densities, and the effect of a thin versus thick sensor bulk on the gain performances. Small inter-pad designs improve the sensor fill factor; however, they lower its capability to hold high bias voltages.
