ABSTRACT
This chapter outlines the present understanding of radiation damage at high fluences. It discusses a possible approach to the design of sensors capable of operating at extreme fluences, addressing different aspects such as the choice of active substrate thickness, the gain layer design, the optimization of the sensor edge and inter-pad regions. The saturation of radiation damages represents a key element in the design of sensors able to sustain extreme fluences, as it opens the way to some viable solutions. The increase of the leakage current reflects the internal multiplication of the charge carriers induced by impact ionization: when new, sensors have a similar gain behavior.
