ABSTRACT
This chapter presents the compact models for small geometry metal-oxide-semiconductor field-effect transistors (MOSFET ) devices. The continuous scaling of MOSFET devices toward decananometer regime has resulted in higher device density and faster circuit speed along with higher power dissipation. Many new physical phenomena became significant with the device dimension rapidly approaching its physical limit. These include small geometry effects, channel length modulation, drain-induced barrier lowering, velocity saturation, mobility degradation due to high vertical electric field, impact ionization, band-to-band tunneling, velocity overshoot, self-heating, inversion-layer quantization, polysilicon depletion, and process variability. In order to develop accurate small geometry compact model, the different structural and physical effects are modeled in device threshold voltage. The nonuniform substrate doping is modeled in device threshold voltage. The chapter presents the compact models for hot carrier–induced substrate current for MOSFETs devices.
