ABSTRACT
This chapter presents the basic understanding of modeling device noise, high-frequency characteristics such as non-quasistatic effect, and the resistive network of the devices. Modeling of the substrate parasitic elements and substrate network is very important for radio frequency (RF) applications of metal-oxide-semiconductor field-effect transistor devices. In order to obtain the desired scalable RF model, it is critical to develop scalable model for each component of the substrate network. Random fluctuations in the current in a device are generated by some fundamental processes in the device. The various types of noise present in an electronic device include thermal noise, shot noise, generation–recombination noise, random telegraph signal noise, and 1/f or flicker noise. Thermal noise arises from the random thermal motion of electrons in a material. When an electron gets scattered, its velocity is randomized. At a particular instant, the number of electrons moving in a certain direction may be more than that in another direction and small net current flows.
