ABSTRACT
Although the energy level of substitutional donors in n-type SiC is shallow, the energy level of substitutional acceptors in p-type SiC becomes deep, indicating that the excited states of the acceptor influence the hole concentration/?^). In p-type wide bandgap semiconductors (i.e., GaN and SiC), a distribution function suitable for acceptor has been proposed and experimentally tested [1], instead of the Fermi-Dirac
distribution function that does not include the influence of excited states of acceptors. In this article, we determine the parameters required to simulate the dependencies of
the carrier concentration and mobility on the temperature and the doping density in 4HSiC. These parameters are required to carry out device simulation for SiC devices.
