ABSTRACT
A special test sequence is presented to determine the endurance and data retention capabilities of EEPROM devices.
Endurance testing is performed by an adress discriminating reprogramming algorithm. The number of reprogramming cycles and verifications per cell is adress dependent and ranges from 300,000 to 10,000. Endurance testing is followed by at least 1200 hours storage at 175”C periodically interrupted to test for any degradation. This method requires only a small number of samples and reduces the testing time for EEPROM qualification.
To demonstrate the abilities of the test method, devices of all three dominant EEPROM structures are evaluated: MNOS, TPFG and FLOTOX. The results show various functional failure modes as well as the impact of the stress on the electrical parameters. The results appear to be consistent with previously published work. This method is suitable as a part of the incoming inspection procedure for EEPROM devices users.
