ABSTRACT
This chapter provides a new perspective of the top-down fabrication technique to produce highly oriented and reproducible nanowires with different channel lengths in defined locations on a large-scale processing mode. As potential application of nanowires in electronics is tremendous, it has been a very popular research area since R. S. Wagner and W. C. Ellis published the novel method way back in 1964 of growing silicon whiskers by using gold catalysts via chemical vapor deposition method. There have been many reports on ZnO thin film growth and the relationship between the crystallography and electrical properties. ZnO has been fabricated for various applications using mostly catalyst-assisted vapor—liquid—solid growth and non-catalyst vapor—solid method. Apart from deposition techniques, etching of these ZnO films play an important role in producing a high conductivity ZnO Nanowire field-effect transistor (NWFET). The chapter concludes that a top-down fabrication of ZnO NWFETs was successfully demonstrated using remote plasma Atomic layer deposition and anisotropic reactive ion etching.
