ABSTRACT
The nonlinear response can be enhanced by the increased electric fields in a photonic crystal structure. The periodic multilayer structure with alternating layers of different refractive indices, which is a one-dimensional photonic crystal and is known as a distributed Bragg reflector (DBR), has transmission modes at both sides of the high reflection band. The electric fields in the transmission modes are much increased due to the large optical density of modes. Therefore, the nonlinearity of two-photon resonance of AlGaAs is enhanced in the periodic multilayer structure consisting of AlGaAs and AlAs. Enhancement of the nonlinearity is expected to be large enough that vertical incident devices are available instead of waveguide devices. In this paper, we introduce an optical gate switch with a semiconductor multilayer structure and show the specific features. We demonstrate ultrafast response of AlGaAs/AlAs multilayer structure, and no absorption in the optical gate operation at 1.55p,m regions.
